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MMBT5179 - NPN RF Transistor

General Description

with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators.

Sourced from Process 40.

Key Features

  • This Devices is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant.

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Datasheet Details

Part number MMBT5179
Manufacturer onsemi
File Size 117.38 KB
Description NPN RF Transistor
Datasheet download datasheet MMBT5179 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN RF Transistor MMBT5179 Description This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Features • This Devices is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, Tstg Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range (Note 1) 12 V 20 V 2.5 V 50 mA −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.