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NPN RF Transistor
MMBT5179
Description This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
Features
• This Devices is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VCEO VCBO VEBO
IC TJ, Tstg
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range (Note 1)
12
V
20
V
2.5
V
50
mA
−55 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.