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MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements. They are also available in surface mount.
Features
• Long Reverse Recovery Time trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
• Low Series Resistance @ 100 MHz −
RS = 0.7 W (Typ) @ IF = 10 mA
• Reverse Breakdown Voltage = 200 V (Min) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation
@ TA = 25°C Derate above 25°C
Symbol VR PD
Value 200
200 2.
MMBV3700LT1G Datasheet
