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MMBV3700LT1G - High Voltage Silicon Pin Diodes

Features

  • Long Reverse Recovery Time trr = 300 ns (Typ).
  • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability.
  • Low Series Resistance @ 100 MHz.
  • RS = 0.7 W (Typ) @ IF = 10 mA.
  • Reverse Breakdown Voltage = 200 V (Min).
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – MMBV3700LT1G

Datasheet Details

Part number MMBV3700LT1G
Manufacturer ON Semiconductor
File Size 106.16 KB
Description High Voltage Silicon Pin Diodes
Datasheet download datasheet MMBV3700LT1G Datasheet
Additional preview pages of the MMBV3700LT1G datasheet.

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Full PDF Text Transcription

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MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements. They are also available in surface mount. Features • Long Reverse Recovery Time trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability • Low Series Resistance @ 100 MHz − RS = 0.7 W (Typ) @ IF = 10 mA • Reverse Breakdown Voltage = 200 V (Min) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Symbol VR PD Value 200 200 2.
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