MMBV3700LT1G Description
MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements. They are also available in surface mount.
MMBV3700LT1G Key Features
- Long Reverse Recovery Time trr = 300 ns (Typ)
- Low Series Resistance @ 100 MHz
- RS = 0.7 W (Typ) @ IF = 10 mA
- Reverse Breakdown Voltage = 200 V (Min)
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS