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MMBV3700LT1G Datasheet High Voltage Silicon Pin Diodes

Manufacturer: onsemi

MMBV3700LT1G Overview

MMBV3700LT1G High Voltage Silicon Pin These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements. They are also available in surface mount. • Long Reverse Recovery Time trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability • Low Series Resistance @ 100 MHz − RS = 0.7 W (Typ) @ IF = 10 mA • Reverse Breakdown Voltage = 200 V (Min) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMBV3700LT1G Key Features

  • Long Reverse Recovery Time trr = 300 ns (Typ)
  • Rugged PIN Structure Coupled with Wirebond Construction for
  • Low Series Resistance @ 100 MHz
  • RS = 0.7 W (Typ) @ IF = 10 mA
  • Reverse Breakdown Voltage = 200 V (Min)
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

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