MMBV809LT1 Description
MMBV809LT1 Preferred Device Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods.
MMBV809LT1 Key Features
- Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel Pb-Free Packages
- Rev. 4
- All Types Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20
- 50 Unit Vdc nAdc