MMDF2P03HD
MMDF2P03HD is Power MOSFET manufactured by onsemi.
feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and mutation modes and the drain- to- source diode has a very low reverse recovery time. Mini MOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc- dc converters, and power management in portable and battery powered products such as puters, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
- Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
- Logic Level Gate Drive
- Can Be Driven by Logic ICs
- Miniature SO- 8 Surface Mount Package
- Saves Board Space
- Diode Is Characterized for Use In Bridge Circuits
- Diode Exhibits High Speed, With Soft Recovery
- IDSS Specified at Elevated Temperature
- Avalanche Energy Specified
- Mounting Information for SO- 8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 1.0 MΩ)
Gate- to- Source Voltage
- Continuous
Drain Current
- Continuous @ TA = 25°C Drain Current
- Continuous @ TA = 100°C Drain Current
- Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ TC = 25°C (Note 2.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS ID ID IDM
TJ, Tstg
30 ± 20 3.0 1.9 15
- 55 to 150
Vdc Vdc Vdc Adc
Apk Watts
°C
Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 18 m H, RG = 25 Ω)
Thermal Resistance
- Junction to...
