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MMDF4207 - Dual P-Channel Field Effect Transistors

Features

  • . The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads.

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Datasheet Details

Part number MMDF4207
Manufacturer onsemi
File Size 209.38 KB
Description Dual P-Channel Field Effect Transistors
Datasheet download datasheet MMDF4207 Datasheet

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Full PDF Text Transcription

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MMDF4207 Dual P-Channel Field Effect Transistors Medium Power Surface Mount Products These devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
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