MMJT350T1
MMJT350T1 is Bipolar Power Transistors manufactured by onsemi.
Features
- High Collector- Emitter Sustaining Voltage
- Excellent DC Current Gain
- Epoxy Meets UL 94 V- 0 @ 0.125 in
- S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant-
DATA SHEET .onsemi.
0.5 AMPERE POWER TRANSISTOR
PNP SILICON 300 VOLTS, 2.75 WATTS
C 2,4
B1 E3 Schematic
MARKING DIAGRAM
4 SOT- 223
1 2 3
CASE 318E STYLE 1
AYW T350 G
A Y W G T350
= Assembly Location = Year = Work Week = Pb- Free Package = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMJT350T1G SOT- 223 1,000 / Tape & Reel (Pb- Free)
SMMJT350T1G SOT- 223 1,000 / Tape & Reel (Pb- Free)
SMMJT350T3G SOT- 223 4,000 / Tape & Reel (Pb- Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
- For additional information on our Pb- Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor ponents Industries, LLC, 2013
January, 2025
- Rev. 9
Publication Order Number: MMJT350T1/D
MMJT350
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
- Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
- Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25C
Derate above...