MMVL2101T1 Datasheet | onsemi

.. Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid- state reliability in replacement of mechanical tuning methods. - High Q - Controlled and Uniform Tuning Ratio - Standard Capacitance Tolerance - 10% - plete Typical Design Curves - Device Marking: 4G http://onsemi. 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 30 200 Unit Vdc m Adc PLASTIC SOD- 323 CASE 477 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit m W m W/°C °C/W °C 1 CATHODE 2 ANODE Rq JA TJ, Tstg - FR- 4 Minimum Pad ORDERING INFORMATION Device MMVL2101T1 Package SOD- 323 Shipping 3000 / Tape & Reel Preferred devices are remended choices for future use and best overall value. © Semiconductor ponents Industries, LLC, 2001 January, 2000 - Rev. 1 Publication Order Number: MMVL2101T1/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz p F Device MMVL2101T1 Min 6.1 Nom 6.8 Max 7.5 Symbol V(BR)R IR TCC Min 30 - - Typ - - 280 Max - 0.1 - Unit Vdc µAdc ppm/°C Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING...