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MMVL809T1 Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods.
Features
• • • •
Controlled and Uniform Tuning Ratio Surface Mount Package Available in 8 mm Tape and Reel Pb−Free Package is Available
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4.5 − 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE
1 CATHODE 2 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 20 20 Unit Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg mW mW/°C Max Unit 1
2
635 °C/W www.DataSheet4U.
MMVL809T1 Datasheet
