MOC8204M
Description
The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor- type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six- pin dual- in- line package.
Features
- High Voltage:
- MOC8204M, BVCEO = 400 V
- H11D1M, BVCEO = 300 V
- H11D3M, BVCEO = 200 V
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN- EN/IEC60747- 5- 5, 850 V Peak Working Insulation Voltage
Applications
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
- Appliance Sensor Systems
- Industrial Controls
DATA SHEET .onsemi.
1 PDIP6 CASE 646BY
6 1
PDIP6 CASE 646BZ
6 1
PDIP6 CASE 646BX
MARKING DIAGRAM
H11D1 VXYYQ
ON = pany Logo
H11D1 = Specific Device Code
= DIN EN/IEC60747- 5- 5 Option
(only appears on ponent ordered with this option)
= One- Digit Year Code
YY = Digit Work Week
Q = Assembly Package Code
ORDERING...
