MOCD223M
Description
The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual- channel version of the MOC223M. They are ideally suited for high density applications, and eliminates the need for through the board mounting.
Features
- High Current Transfer Ratio of 500% Minimum at IF = 1 m A
- Minimum BVCEO of 30 V Guaranteed
- Convenient Plastic SOIC- 8 Surface Mountable Package Style, with
0.050″ Lead Spacing
- Safety and Regulatory Approvals:
- UL2688, 2,500 VACRMS for 1 Minute
- DIN- EN/IEC60747- 5- 5, 565 V Peak Working Insulation Voltage
- These Devices are Pb- Free and Halogen Free
Applications
- Low Power Logic Circuits
- Interfacing and Coupling Systems of Different Potentials and
Impedances
- Telemunications Equipment
- Portable Electronics
- Solid State Relays
SOIC8 CASE 751DZ
MARKING DIAGRAMS
$Y 223 VXYYS
$Y D223 VXYYS
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