MPF930
MPF930 TMOS Switching
N- Channel
- Enhancement
MAXIMUM RATINGS Rating
Drain
- Source Voltage Drain
- Gate Voltage Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 μs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C
Symbol VDS VDG
VGS VGSM
ID IDM PD
MPF930 35 35
MPF960 60 60 ± 20 ± 40
2.0 3.0 1.0 8.0
MPF990 90 90
Unit Vdc Vdc Vdc Vpk Adc
W m W/°C http://onsemi.
CASE 29- 05, STYLE 22 TO- 92 (TO- 226AE)
1 23 3 DRAIN
Operating and Storage Junction Temperature Range
TJ, Tstg
- 55 to 150
°C
2 GATE
Thermal Resistance
θJA
125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
1 SOURCE Typ Max
Unit
OFF CHARACTERISTICS
Drain- Source Breakdown Voltage (VGS = 0, ID = 10 μAdc)
MPF930 MPF960 MPF990
V(BR)DSX
Vdc...
