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MPS6726
One Watt Amplifier Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
−30 −40 −5.0 −1.0 1.0 8.0
Vdc Vdc Vdc Adc W mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
MPS6726 Datasheet
