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MPSA44
Preferred Device
High Voltage Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
400 Vdc
500 Vdc
6.0 Vdc
300 mAdc
625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device.
MPSA44 Datasheet
