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MPSL01 Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO VCBO VEBO IC PD
PD
TJ, Tstg
Value
120
140
5.0
150
625 5.0
1.5 12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW mW/°C
W mW/°C
°C
Symbol RqJA
RqJC
Max 200
83.3
Unit °C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1) (IC = 1.