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MSB92ASWT1
Preferred Device
PNP Silicon General Purpose High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Electrostatic Discharge
V(BR)CBO V(BR)CEO V(BR)EBO
IC ESD
Value -300 -300 -5.0 500 MBMu16,000, MMu2,000
Unit Vdc Vdc Vdc mAdc
V
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1.)
PD
150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
- 55 ~ + 150
°C
1.