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MSC3130T1
Preferred Device
NPN RF Amplifier Transistor Surface Mount
MAXIMUM RATINGS (TA = 25°C) Rating
Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC
Symbol PD TJ Tstg
Value 15 10 3.0 50
Max 200 150 −55 ~ +150
Unit Vdc Vdc Vdc mAdc
Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min
Collector Cutoff Current (VCB = 10 Vdc, IE = 0)
ICBO
—
Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
VCEO
10
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
VEBO
3.0
DC Current Gain (Note 1) (VCE = 4.0 Vdc, IC = 5.
MSC3130T1 Datasheet
