MSC3130T1
Preferred Device
NPN RF Amplifier Transistor Surface Mount
MAXIMUM RATINGS (TA = 25°C) Rating
Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC
Symbol PD TJ Tstg
Value 15 10 3.0 50
Max 200 150
- 55 ~ +150
Unit Vdc Vdc Vdc m Adc
Unit m W °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min
Collector Cutoff Current (VCB = 10 Vdc, IE = 0)
ICBO
- Collector- Emitter Breakdown Voltage (IC = 2.0 m Adc, IB = 0)
VCEO
Emitter- Base Breakdown Voltage (IE = 10 m Adc, IC = 0)
VEBO
DC Current Gain (Note 1) (VCE = 4.0 Vdc, IC = 5.0 m Adc) h FE 75
Collector- Emitter Saturation Voltage (IC = 20 m Adc, IB = 4.0 m Adc)
VCE(sat)
- Current- Gain
- Bandwidth Product (VCB = 4.0 Vdc, IE =
- 5.0 m Adc) f T
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. v 2%.
Max 1.0
- - 400 0.5 2.5
Unit m Adc...
