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MSD1819A-RT1 - General Purpose Amplifier Transistor

Key Features

  • High hFE, 210 -- 460.
  • Low VCE(sat), < 0.5 V.
  • Moisture Sensitivity Level 1.
  • ESD Protection: Human Body Model > 4000 V Machine Model > 400 V.
  • These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number MSD1819A-RT1
Manufacturer onsemi
File Size 205.09 KB
Description General Purpose Amplifier Transistor
Datasheet download datasheet MSD1819A-RT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSD1819A- RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features  High hFE, 210 -- 460  Low VCE(sat), < 0.5 V  Moisture Sensitivity Level 1  ESD Protection: Human Body Model > 4000 V Machine Model > 400 V  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.