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MSD2714AT1 - VHF/UHF Transistor

Key Features

  • Pb.
  • Free Package is Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Max 25 30 3.0 Unit Vdc Vdc Vdc http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD (Note 1) RqJA PD (Note 2) RqJA TJ, Tstg Max 225 1.8 556 Unit mW mW/°C °C/W 2 1 3 SC−59 CASE 318D STYLE 1 300 mW 2.4 mW/°C www.DataSheet4U.