MTB15N06V
Overview
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors Features Common to TMOS V and TMOS E-FETs
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E-FET
- Surface Mount Package Available in 16 mm 13-inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
