Datasheet Summary
Designer’s™ Data Sheet TMOS E- FET.™ High Energy Power FET D2PAK for Surface Mount
N- Channel Enhancement- Mode Silicon Gate http://onsemi.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where...
