MTB2N60E datasheet by onsemi.
| Part number | MTB2N60E |
|---|---|
| Datasheet | MTB2N60E-ONSemiconductor.pdf |
| File Size | 260.49 KB |
| Manufacturer | onsemi |
| Description | High Energy Power FET |
|
|
MTB2N60E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and mutation modes.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB2N60E | TMOS POWER FET | Motorola |
| Part Number | Description |
|---|---|
| MTB23P06V | Power MOSFET |
| MTB29N15E | Power MOSFET |
| MTB1306 | Power MOSFET |
| MTB15N06V | Power Field Effect Transistor |
| MTB16N25E | High Energy Power FET |
| MTB30N06VL | Power MOSFET |
| MTB30P06V | Power MOSFET |
| MTB36N06V | Power MOSFET |
| MTB3N100E | High Energy Power FET |
| MTB3N60E | High Energy Power FET |
