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MTB50P03HDL Datasheet P-channel Power MOSFET

Manufacturer: onsemi

Overview: MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Key Features

  • Avalanche Energy Specified.
  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Short Heatsink Tab Manufactured.
  • Not Sheared.
  • Specially Designed Leadframe for Maximum Power Dissipation.
  • MVB Prefix for Automotive and Other.

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