MTB50P03HDL
Features
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a
Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Short Heatsink Tab Manufactured
- Not Sheared
- Specially Designed Leadframe for Maximum Power Dissipation
- MVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MW) Gate- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 10 ms) Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted with min. remended pad size
VDSS VDGR
VGS VGSM
ID ID IDM PD
30 Vdc 30 Vdc
±15...
