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MTB60N06HD - Power MOSFET

Datasheet Summary

Features

  • load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 VDS = 0 V Ciss 4000 VGS = 0 V TJ = 25°C C,.

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Datasheet preview – MTB60N06HD

Datasheet Details

Part number MTB60N06HD
Manufacturer ON Semiconductor
File Size 274.96 KB
Description Power MOSFET
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MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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