MTD1312
Advance Information
Power MOSFET
25 Amps, 30 Volts
N- Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Source- to- Drain Diode Recovery Time parable to a
Discrete Fast Recovery Diode
- Diode Is Characterized for Use In Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 1.0 MΩ)
Gate- to- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 10 ms)
VDSS VDGR
VGS VGSM
30 30
± 20 ± 20
Operating and Storage Temperature Range
TJ,...
