MTD6N15 - Power Field Effect Transistor

onsemi

Key Features

RINT.
6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm Ǔ ǒinches.
For additional information on our Pb.
Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual,.

MTD6N15 power field effect transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	MTD6N15
Manufacturer	onsemi
File Size	119.78 KB
Description	Power Field Effect Transistor
Datasheet	MTD6N15 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.3 Ω Max • Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use With Inductive Loads • Low Drive Requirement — VGS(th) = 4.0 V Max • Surface Mount Package on 16 mm Tape MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.