MTD6N20E Description
MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well...
MTD6N20E Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a
- Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Te
- Continuous
- Non-repetitive (tp ≤ 10 ms) Drain Current
- Continuous
- Continuous @ 100°C
- Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operati
- Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance
- Junction-to-Case