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MTP12P10 - Power MOSFET

Key Features

  • Silicon Gate for Fast Switching Speeds.
  • Switching Times Specified at 100°C.
  • Designer’s Data.
  • IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature.
  • Rugged.
  • SOA is Power Dissipation Limited.
  • Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads.
  • Pb.
  • Free Package is Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P−Channel TO−220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features • Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C • Designer’s Data − IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature • Rugged − SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use With Inductive Loads • Pb−Free Package is Available* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.