MTP12P10
Features
- Silicon Gate for Fast Switching Speeds
- Switching Times Specified at 100°C
- Designer’s Data
- IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
- Rugged
- SOA is Power Dissipation Limited
- Source- to- Drain Diode Characterized for Use With Inductive Loads
- Pb- Free Package is Available-
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MW)
Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 ms)
Drain Current
- Continuous Drain Current
- Pulsed
VDSS VDGR
VGS VGSM
ID IDM
100 Vdc 100 Vdc
± 20 Vdc ± 40 Vpk 12 Adc 28
Total Power Dissipation Derate above 25°C
PD 75 W 0.6 W/°C
Operating...
