MTP2N60E - Power Field Effect Transistor

onsemi

Key Features

ss 300 200 Coss 100 Crss 0 10 5 0 5 10 15 20 25 VGS VDS GATE.
TO.
SOURCE OR DRAIN.
TO.
SOURCE.

MTP2N60E power field effect transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	MTP2N60E
Manufacturer	onsemi
File Size	206.15 KB
Description	Power Field Effect Transistor
Datasheet	MTP2N60E Datasheet

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Full PDF Text Transcription (Reference)

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MTP2N60E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.