MTP2N60E
MTP2N60E is Power Field Effect Transistor manufactured by onsemi.
Designer’s™ Data Sheet TMOS E- FET.™ Power Field Effect
Transistor
N- Channel Enhancement- Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.
TMOS POWER FET 2.0 AMPERES, 600 VOLTS
RDS(on) = 3.8 W
TO- 220AB CASE 221A- 06
Style 5
®G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating
Symbol
Value
S Unit
Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 1.0 MΩ)
Gate- to- Source Voltage
- Continuous
- Single Pulse (tp ≤ 50 μs)
Drain Current
- Continuous
- Single Pulse (tp ≤ 10 μs)
VDSS VDGR VGS
ID IDM
600 Vdc
600 Vdc
± 20 Vdc ± 40
2.0 Adc 9.0
Total Power Dissipation Derate above 25°C
PD 50 Watts 0.4 W/°C
Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 95 m H, RG = 25 Ω, Peak IL = 2.0 Adc)
TJ, Tstg EAS
- 55 to 150...
