Datasheet4U Logo Datasheet4U.com

MTP2P50EG - Power MOSFET

Features

  • Robust High Voltage Termination.
  • Avalanche Energy Specified.
  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

📁 Similar Datasheet

  • MTP2P50E - TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS (Motorola)
  • MTP2P50 - POWER FIELD EFFECT TRANSISTOR (Motorola)
  • MTP2P45 - POWER FIELD EFFECT TRANSISTOR (Motorola)
  • MTP2010J3 - P-Channel Logic Level Enhancement Mode MOSFET (CYStech Electronics)
  • MTP2071M3 - 20V P-CHANNEL Enhancement Mode MOSFET (CYStech Electronics)
  • MTP20N06V - TMOS POWER FET (Motorola)
  • MTP20N08 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • MTP20N10 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • MTP20N20E - TMOS POWER FET (Motorola)
  • MTP20P06 - Power Field Effect Transistor (Motorola Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Published: |