MTP50P03HDLG Overview
MTP50P03HDLG Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for...
MTP50P03HDLG Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- These are Pb-Free Devices
- Continuous
- Non-Repetitive (tp ≤ 10 ms)
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 ms)
