MTP50P03HDLG
Key Features
- Avalanche Energy Specified
- Source−to−Drain Diode Recovery Time parable to a Discrete
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- These are Pb−Free Devices
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| MTP50P03HDL | Motorola Semiconductor | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM |