MTP5N40E - High Energy Power FET

Features

s of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half.
bridge PWM DC motor controllers are common.

onsemi

Datasheet Details

Part number	MTP5N40E
Manufacturer	onsemi
File Size	251.69 KB
Description	High Energy Power FET
Datasheet	MTP5N40E Datasheet
Additional preview pages of the MTP5N40E datasheet.

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Full PDF Text Transcription

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MTP5N40E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Published: Jan 18, 2016 |