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MTP5P06V - Power MOSFET

Features

  • AGE (VOLTS) t, TIME (ns) 100 TJ = 25°C ID = 5 A VDD = 30 V VGS = 10 V tr td(off) 10 tf td(on) 1 1 10 RG, GATE.

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Full PDF Text Transcription

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MTP5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
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