MTP6P20E
Preferred Device
Power MOSFET 6 Amps, 200 Volts
P- Channel TO- 220
This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a
Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain- Source Voltage
VDSS
Drain- Gate Voltage (RGS = 1.0 MΩ)
VDGR
Gate- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 10...
