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MTV16N50E - Power Field Effect Transistor

Key Features

  • 2000 1000 Coss 0.
  • 10.
  • 5 Crss 0 5 10 15 20 25 VGS VDS GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

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Datasheet Details

Part number MTV16N50E
Manufacturer onsemi
File Size 261.31 KB
Description Power Field Effect Transistor
Datasheet download datasheet MTV16N50E Datasheet

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Full PDF Text Transcription (Reference)

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MTV16N50E Advance Information TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.