MTW32N20E Description
MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for...
MTW32N20E Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Isolated Mounting Hole
- This is a Pb-Free Device
- Continuous Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C