Datasheet4U Logo Datasheet4U.com

MTY16N80E - Power Field Effect Transistor

Features

  • ) Figure 7b. High Voltage Capacitance Variation C,.

📥 Download Datasheet

Datasheet Details

Part number MTY16N80E
Manufacturer onsemi
File Size 208.90 KB
Description Power Field Effect Transistor
Datasheet download datasheet MTY16N80E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM Motorola
MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM Motorola
MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM Motorola
MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM Motorola
MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM Motorola

Other Datasheets by onsemi

Part Number Description
MTY14N100E Power Field Effect Transistor
MTY20N50E Power MOSFET

Full PDF Text Transcription

Click to expand full text
MTY16N80E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Published: |