MTY16N80E Datasheet | onsemi

Designer’s™ Data Sheet TMOS E- FET.™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage...