MVB50P03HDLT4G Overview
MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well...
MVB50P03HDLT4G Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Short Heatsink Tab Manufactured
- Not Sheared
- Specially Designed Leadframe for Maximum Power Dissipation
- MVB Prefix for Automotive and Other