• Part: MVB50P03HDLT4G
  • Description: P-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 135.92 KB
MVB50P03HDLT4G Datasheet (PDF) Download
onsemi
MVB50P03HDLT4G

Key Features

  • Avalanche Energy Specified
  • Source−to−Drain Diode Recovery Time parable to a
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Short Heatsink Tab Manufactured − Not Sheared
  • Specially Designed Leadframe for Maximum Power Dissipation
  • MVB Prefix for Automotive and Other Applications Requiring
  • These Devices are Pb−Free and are RoHS pliant