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NCD57001F - High Current IGBT Gate Driver

General Description

No.

11 RDY 12 Power

Output side negative power supply.

Key Features

  • include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn.
  • off at DESAT. NCD57001F accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001F provides >5 kVrms (UL1577 rating) galvanic isolation and >1200 Viorm (working voltage) capabilities. NCD57001F is available in the wide.
  • body SOIC.
  • 16 package with g.

📥 Download Datasheet

Datasheet Details

Part number NCD57001F
Manufacturer onsemi
File Size 221.71 KB
Description High Current IGBT Gate Driver
Datasheet download datasheet NCD57001F Datasheet

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Other Datasheets by onsemi

Part Number Description
NCD57001 Isolated High Current IGBT Gate Driver
NCD5700 High Current IGBT Gate Driver
NCD57000 Isolated High Current IGBT Gate Driver
NCD5701A High Current IGBT Gate Drivers
NCD5701B High Current IGBT Gate Drivers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isolated High Current IGBT Gate Driver NCD57001F NCD57001F is a variant of NCD57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCD57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001F accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001F provides >5 kVrms (UL1577 rating) galvanic isolation and >1200 Viorm (working voltage) capabilities.