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NCD57090C - IGBT/MOSFET Gate Driver

This page provides the datasheet information for the NCD57090C, a member of the NCD57090A IGBT/MOSFET Gate Driver family.

Datasheet Summary

Description

No.

Power Input side power supply.

and should be placed close to the pins for best results.

Features

  • High Peak Output Current (+6.5 A/.
  • 6.5 A).
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn.
  • on (Version A/D/F).
  • Short Propagation Delays with Accurate Matching.
  • IGBT/MOSFET Gate Clamping during Short Circuit.
  • IGBT/MOSFET Gate Active Pull Down.
  • Tight UVLO Thresholds for Bias Flexibility.
  • Wide Bias Voltage Range including Negative VEE2 (Version B).
  • 3.3 V, 5 V, an.

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Datasheet preview – NCD57090C

Datasheet Details

Part number NCD57090C
Manufacturer ON Semiconductor
File Size 1.91 MB
Description IGBT/MOSFET Gate Driver
Datasheet download datasheet NCD57090C Datasheet
Additional preview pages of the NCD57090C datasheet.

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Full PDF Text Transcription

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Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package. Features • High Peak Output Current (+6.5 A/−6.
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