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NCN4557 - Dual SIM/SAM/Smart Card Power Supply and Level Shifter

Description

1 CRD_VCCB POWER This pin is connected to the Card power supply pin (C1) (Card B).The corresponding LDO is programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).

CRD_VCCB can not be active when CRD_VCCA is active and conversely.

Features

  • Supports 1.8 V or 3.0 V Operating SIM/SAM/Smart Cards.
  • The LDOs are able to Supply more than 50 mA Under 1.8 V and 3.0 V.
  • Built.
  • in Active and Passive Pullup Resistor for I/O and CRD_IOA/B Pins in Both Directions.
  • All Pins are Fully ESD Protected According to ISO.
  • 7816 Specifications.
  • ESD Protection on Card Pins in Excess of 8.0 kV (JEDEC HBM).
  • Built.
  • in Sequencer for Activation and Deactivation.
  • Supports up to.

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Datasheet preview – NCN4557

Datasheet Details

Part number NCN4557
Manufacturer ON Semiconductor
File Size 234.56 KB
Description Dual SIM/SAM/Smart Card Power Supply and Level Shifter
Datasheet download datasheet NCN4557 Datasheet
Additional preview pages of the NCN4557 datasheet.

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Full PDF Text Transcription

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NCN4557 1.8 V/3.0 V Dual SIM/SAM/ Smart Card Power Supply and Level Shifter The NCN4557 is a dual interface analog circuit designed to translate the voltages between SIM, SAM or Smart Cards and a microcontroller (or similar control device). It integrates two LDOs for power conversion and three level shifters per channel allowing the management of two independent chip cards. The device fulfills the ISO7816 and EMV smart card interface requirements as well as the GSM and 3G mobile standard. Due to a built−in sequencer, the device enables automatic activation and deactivation. Through the ENABLE pin a low current shutdown mode can be activated extending the battery life. The card power supply voltage (1.8 V or 3.
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