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NCP51820 - High Speed Half-Bridge Driver

General Description

Pin No.

side driver positive bias voltage output High side driver sourcing output High side driver sinking output S

Key Features

  • 650 V, Integrated High.
  • Side and Low.
  • Side Gate Drivers.
  • Recommended for Soft Switching.

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Datasheet Details

Part number NCP51820
Manufacturer onsemi
File Size 815.17 KB
Description High Speed Half-Bridge Driver
Datasheet download datasheet NCP51820 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Speed Half-Bridge Driver for GaN Power Switches NCP51820 The NCP51820 high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility transistor (HEMT) and gate injection transistor (GIT), gallium nitrade (GaN) power switches in off−line, half−bridge power topologies. The NCP51820 offers short and matched propagation delays with advanced level shift technology providing −3.5 V to +650 V (typical) common mode voltage range for the high−side drive and −3.5 V to +3.5 V common mode voltage range for the low−side drive. In addition, the device provides stable dV/dt operation rated up to 200 V/ns for both driver output stages in high speed switching applications.