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NCV51561 - Dual Channel Gate Driver

Key Features

  • 4.5 A Peak Source, 9 A Peak Sink Output Current Capability.
  • Flexible: Dual Low.
  • Side, Dual High.
  • Side or Half.
  • Bridge Gate Driver.
  • Independent UVLO Protections for Both Output Drivers.
  • Output Supply Voltage from 6.5 V to 30 V with 5.
  • V and 8.
  • V for MOSFET, 13.
  • V and 17.
  • V UVLO for SiC, Thresholds.
  • Common Mode Transient Immunity CMTI > 200 V/ns.
  • Propagation Delay Typical 36 ns with  5 ns Max Delay Matching per Channe.

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Datasheet Details

Part number NCV51561
Manufacturer onsemi
File Size 3.47 MB
Description Dual Channel Gate Driver
Datasheet download datasheet NCV51561 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com 5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver NCV51561 The NCV51561 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCV51561 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time.