NCV51705 Overview
Single 6 A High-Speed, Low-Side SiC MOSFET Driver NCV51705 The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized.
NCV51705 Key Features
- Automotive Qualified to AEC-Q100 with Grade 1 Temperature
- High Peak Output Current with Split Output Stages to Allow
- Extended Positive Voltage Rating for Efficient SiC MOSFET
- Adjustable, On-board Regulated Charge Pump
- Negative Voltage Drive for Fast Turn-off
- Built-in Negative Charge Pump
- Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply
- Adjustable Under-Voltage Lockout
- Desaturation Function
- Small & Low Parasitic Inductance QFN24 Package with Wettable