Datasheet4U Logo Datasheet4U.com

NCV57080B Datasheet Isolated High Current IGBT Gate Driver

Manufacturer: onsemi

Overview: Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y (x = D or V, y = A, B or C) NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept plementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C) for system design convenience. The driver acmodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in narrow−body SOIC−8 package.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High Peak Output Current (+6.5 A/.
  • 6.5 A).
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn.
  • on (Version A).
  • Short Propagation Delays with Accurate Matching.
  • IGBT/MOSFET Gate Clamping during Short Circuit.
  • IGBT/MOSFET Gate Active Pull Down.
  • Tight UVLO Thresholds for Bias Flexibility.
  • Wide Bias Voltage Range including Negative VEE2 (Version B).
  • 3.3 V, 5 V, and 15.

More Datasheets from onsemi

Part Number Description
NCV57080A Isolated High Current IGBT Gate Driver
NCV57080C Isolated High Current IGBT Gate Driver
NCV57081A Isolated High Current IGBT Gate Driver
NCV57081B Isolated High Current IGBT Gate Driver
NCV57081C Isolated High Current IGBT Gate Driver
NCV57084 IGBT Gate Driver
NCV57085 Gate Driver IGBT
NCV5700 High Current IGBT Gate Driver
NCV57000 IGBT
NCV57001 IGBT Gate Driver

NCV57080B Distributor