NDB6060L Overview
RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes.
