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NDB6060L - N-Channel FET

Key Features

  • 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage.

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Datasheet Details

Part number NDB6060L
Manufacturer onsemi
File Size 448.91 KB
Description N-Channel FET
Datasheet download datasheet NDB6060L Datasheet

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Full PDF Text Transcription (Reference)

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NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.