NDC25170A - SiC Schottky Diode

onsemi

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

Max Junction Temperature 175C.
Avalanche Rated 506 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery / No Forward Recovery.

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NDC25170A sic schottky diode by onsemi - Datasheet Preview

Datasheet Details

Part number	NDC25170A
Manufacturer	onsemi
File Size	191.59 KB
Description	SiC Schottky Diode
Datasheet	NDC25170A Datasheet

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die NDC25170A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.