NDC25170A
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175C
- Avalanche Rated 506 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
Applications
- Industrial Motor Loads, Wind Generation Inverter, Solar Inverter,
- Power Switching Circuits
Die Information
- Wafer Diameter: 6 inch
- Die Size: 4000 x 4000 mm
(include Scribe Lane)
- Metallization:
Top: Ti/Ti N/Al Si Cu Back: Ti/Ni V/Ag
- Die Thickness: Typ. 200 mm
- Bonding Pad Size:
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