Description
These dual N & P
Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance, provide rugged and reliable performance and fast switching
Features
- Q1 0.51 A, 60 V
RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V.
- Q2.
- 0.34 A, 60 V
RDS(ON) = 5 W @ VGS =.
- 10 V RDS(ON) = 7.5 W @ VGS =.
- 4.5 V.
- High Saturation Current.
- High Density Cell Design for Low RDS(ON).
- Proprietary SUPERSOTt.
- 6 Package Design Using Copper Lead
Frame for Superior Thermal and Electrical Capabilities.
- This is a Pb.
- Free Device.
NDC7001C Datasheet
