NDC7001C Description
These dual N & P−Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply application.
NDC7001C Key Features
- Q1 0.51 A, 60 V
- Q2 -0.34 A, 60 V
- High Saturation Current
- High Density Cell Design for Low RDS(ON)
- Proprietary SUPERSOTt-6 Package Design Using Copper Lead
- This is a Pb-Free Device