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NDF60N360U1, NDD60N360U1
N-Channel Power MOSFET 600 V, 360 mW
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC
Steady State
TC = 25°C TC = 100°C
VDSS VGS ID
600
±25
13 (Note 1)
11
8.1 (Note 1)
6.9
V V A
Power
Steady
TC =
PD
30 114 W
Dissipation – State
25°C
RqJC
Pulsed Drain Current
tp = 10 ms
IDM 51 44 A
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy
TJ, TSTG
IS EAS
−55 to +150
13 11 64
°C
A mJ
RMS Isolation Voltage (t = 0.3 sec., R.H.
NDF60N360U1 Datasheet
