NDP06N62Z Datasheet | onsemi

.. NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features - - - - Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb- Free and RoHS pliant VDSS 620 V Rating Drain- to- Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate- to- Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A ESD (HBM) (JESD 22- A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID...