NDP08N60Z - N-Channel Power MOSFET

onsemi

Key Features

Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb.
Free and are RoHS Compliant VDSS 600 V http://onsemi. com RDS(ON) (MAX) @ 3.5 A 0.95 W.

NDP08N60Z n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NDP08N60Z
Manufacturer	onsemi
File Size	137.45 KB
Description	N-Channel Power MOSFET
Datasheet	NDP08N60Z Datasheet

Full PDF Text Transcription for NDP08N60Z (Reference)

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DataSheet.in NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free ...

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tance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V http://onsemi.com RDS(ON) (MAX) @ 3.5 A 0.95 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.5 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H.

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