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NDPL070N10B - Power MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Charge.
  • High Speed Switching.
  • 100% Avalanche Tested.
  • Pb-Free and RoHS compliance.

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Full PDF Text Transcription for NDPL070N10B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NDPL070N10B. For precise diagrams, and layout, please refer to the original PDF.

NDPL070N10B Power MOSFET 100V, 10.8mΩ, 70A, N-Channel This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed t...

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ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.